Abstract:
Eco-friendly and facile zinc oxide (ZnO) synthesis of zinc-oxide-based nanomaterials with
specific properties is a great challenge due to its excellent industrial applications in the field of
semiconductors and solar cells. In this paper, we report the production of zinc oxide thin films at
relatively low deposition temperature employing a simple and non-toxic method at low substrate
temperature: pulsed laser ablation, as a first step for developing a n-ZnO/p-Si heterojunction. Singlephase
n-type zinc oxide thin films are confirmed by an X-ray diffraction (XRD) pattern revealed by the
maximum diffraction intensity from the (002) plane. Absorbance measurements indicate an increase
in the band gap energy close to the bulk ZnO. A 350 degree C substrate temperature led to obtaining a
highly porous film with high crystallinity and high bandgap, showing good premises for further
applications.
